/**
  ******************************************************************************
  * 版   本       ：V1.0.0
  * 作   者       ：liuyanbin
  * 版权所有，盗版必究。
  * Copyright(C) All rights reserved
  ******************************************************************************
  *                             历史记录
  *     序号      版本        变更内容          作者              日期
  *      1        V0.0.1      实现flash存储      刘艳斌          2024/1/24
  *
  ******************************************************************************
  */

#include "stm32f10x.h"
#include "INflash.h"

#include "AT.h"
#include "string.h"
#include "Delay.h"
Coefficient_Data flashdata;
uint8_t register_success;
uint16 STMFLASH_BUF[STM32_SECTOR_SIZE/2];//最多是2K字节
void write_to_flash(uint32 WriteAddr,uint16 *pBuffer,uint16 NumToWrite)
{
    uint16 i;
	for(i=0;i<NumToWrite;i++)
	{
		FLASH_ProgramHalfWord(WriteAddr,pBuffer[i]);
	    WriteAddr+=2;//地址增加2.
	}  

}
//读取指定地址的半字(16位数据)
//faddr:读地址(此地址必须为2的倍数!!)
//返回值:对应数据.
uint16 STMFLASH_ReadHalfWord(uint32 faddr)
{
	return *(vu16*)faddr; 
}
//从指定地址开始读出指定长度的数据
//ReadAddr:起始地址
//pBuffer:数据指针
//NumToWrite:半字(16位)数
void STMFLASH_Read(uint32 ReadAddr,uint16 *pBuffer,uint16 NumToRead)   	
{
	uint16 i;
	for(i=0;i<NumToRead;i++)
	{
		pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
		ReadAddr+=2;//偏移2个字节.	
	}
}
void STMFLASH_Write(uint32 WriteAddr,uint16 *pBuffer,uint16 NumToWrite)
{
  	uint32 secpos;	   //扇区地址
	uint16 secoff;	   //扇区内偏移地址(16位字计算)
	uint16 secremain; //扇区内剩余地址(16位字计算)	   
 	uint16 i;    
	uint32 offaddr;   //去掉0X08000000后的地址
	if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
	FLASH_Unlock();	
	offaddr=WriteAddr-STM32_FLASH_BASE;		//实际偏移地址.
	secpos=offaddr/STM32_SECTOR_SIZE;	 //扇区地址  0~127 for STM32F103RBT6
	secoff=(offaddr%STM32_SECTOR_SIZE)/2;		//在扇区内的偏移(2个字节为基本单位.)
	secremain=STM32_SECTOR_SIZE/2-secoff;		//扇区剩余空间大小  
	if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
	while(1) 
	{	
		STMFLASH_Read(secpos*STM32_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM32_SECTOR_SIZE/2);//读出整个扇区的内容
		for(i=0;i<secremain;i++)//校验数据
		{
			if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除  	  
		}
		if(i<secremain)//需要擦除
		{
			FLASH_ErasePage(secpos*STM32_SECTOR_SIZE+STM32_FLASH_BASE);//擦除这个扇区
			for(i=0;i<secremain;i++)//复制
			{
				STMFLASH_BUF[i+secoff]=pBuffer[i];	  
			}
			write_to_flash(secpos*STM32_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM32_SECTOR_SIZE/2);//写入整个扇区  
		}else write_to_flash(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间. 				   
		if(NumToWrite==secremain)break;//写入结束了
		else//写入未结束
		{
			secpos++;				//扇区地址增1
			secoff=0;				//偏移位置为0 	 
		   	pBuffer+=secremain;  	//指针偏移
			WriteAddr+=secremain;	//写地址偏移	   
		   	NumToWrite-=secremain;	//字节(16位)数递减
			if(NumToWrite>(STM32_SECTOR_SIZE/2))secremain=STM32_SECTOR_SIZE/2;//下一个扇区还是写不完
			else secremain=NumToWrite;//下一个扇区可以写完了
		}	 
	};	
	FLASH_Lock();//上锁
 
}
//清空flash
void clearflash(void){
flashdata.read_flag=0;
memcpy(flashdata.deviceSecret,"0",40);
memcpy(flashdata.productKey,"0",20);
memcpy(flashdata.deviceName,"0",20);
delay_ms(10);
STMFLASH_Write(FLASH_SAVE_ADDR,(uint16*)&flashdata,sizeof(flashdata));
}
void storedata(void){

flashdata.read_flag=1;
 Log_Printf_Debug("###########\r\n");
 Log_Printf_Debug("deviceSecret:%s,productKey:%s,deviceName:%s,read_flag:%d\r\n",flashdata.deviceSecret,flashdata.productKey,flashdata.deviceName,flashdata.read_flag);
 Log_Printf_Debug("结构体大小: %d\r\n", sizeof(Coefficient_Data));
	
     
     delay_ms(10);
    STMFLASH_Write(FLASH_SAVE_ADDR,(uint16*)&flashdata,sizeof(flashdata));
    flashdata.read_flag=0;
    delay_ms(10);
   Log_Printf_Debug("写入数据完成\r\n");
   STMFLASH_Read(FLASH_SAVE_ADDR,(uint16*)&flashdata,sizeof(flashdata));
   Log_Printf_Debug("读取完成read_flag:%d,deviceSecret:%s,productKey:%s,deviceName:%s\r\n",flashdata.read_flag,flashdata.deviceSecret,flashdata.productKey,flashdata.deviceName);

}
void store(void){



if(register_success==1){
    storedata();
}
else
{
Log_Printf_Debug("数据解析失败，没有存储flash\r\n");
flashdata.read_flag=0;
}



}